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FDP047N08 N-Channel PowerTrench(R) MOSFET
March 2008
FDP047N08
N-Channel
Features
* RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(on) * High power and current handling capability * RoHS compliant
PowerTrench(R)
tm
MOSFET
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
75V, 164A, 4.7m
Application
* DC to DC convertors / Synchronous Rectification
D
G
GDS
TO-220 FDP Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 75 20 164* 116* 656 670 3.0 268 1.79 -55 to +175 300 Units V V A A A mJ V/ns W W/oC
oC oC
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient
1
Ratings 0.56 0.5 62.5
Units
oC/W
(c)2008 Fairchild Semiconductor Corporation FDP047N08 Rev. A
www.fairchildsemi.com
FDP047N08 N-Channel PowerTrench(R) MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP047N08 Device FDP047N08 Package TO-220 Reel Size Tape Width Quantity 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to 25 C VDS = 75V, VGS = 0V VDS = 75V, TC = 150oC VGS = 20V, VDS = 0V
o
75 -
0.02 -
1 500 100
V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 80A VDS = 10V, ID = 80A
(Note 4)
2.5 -
3.5 3.7 150
4.5 4.7 -
V m S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz 7080 870 410 9415 1155 615 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(tot) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 60V, ID = 80A VGS = 10V
(Note 4, 5)
VDD = 37.5V, ID = 80A RGEN = 25, VGS = 10V
(Note 4, 5)
100 147 220 114 117 37 32
210 304 450 238 152 -
ns ns ns ns nC nC nC
-
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 80A VGS = 0V, ISD = 80A dIF/dt = 100A/s
(Note 4)
-
45 66
164 656 1.25 -
A A V ns nC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.21mH, IAS = 80A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP047N08 Rev. A
2
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FDP047N08 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
500
*Notes: 1. VDS = 20V 2. 250s Pulse Test
100
ID,Drain Current[A]
ID,Drain Current[A]
100
175 C
o o
10
10
-55 C
o
25 C
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
1 0.002
1 3 4 5 6 VGS,Gate-Source Voltage[V] 7
0.01 0.1 1 VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.006
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
500
RDS(ON) [], Drain-Source On-Resistance
0.005
VGS = 10V
IS, Reverse Drain Current [A]
100
175 C 25 C
o o
0.004
VGS = 20V
10
0.003
o
*Note: TC = 25 C
*Notes: 1. VGS = 0V
0.002 0 100 200 300 ID, Drain Current [A] 400
1 0.2
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
12000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 15V VDS = 37.5V VDS = 60V
Ciss
8
Capacitances [pF]
8000
6
Coss
4000
Crss
*Note: 1. VGS = 0V 2. f = 1MHz
4
2
*Note: ID = 80A
0 0.1
0
1 10 VDS, Drain-Source Voltage [V] 30
0
20
40 60 80 100 Qg, Total Gate Charge [nC]
120
FDP047N08 Rev. A
3
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FDP047N08 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.15 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
2.5
1.10
RDS(on), [Normalized] Drain-Source On-Resistance
2.0
1.05
1.5
1.00
1.0
*Notes: 1. VGS = 10V 2. ID = 80A
0.95
*Notes: 1. VGS = 0V 2. ID = 10mA
0.90 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
0.5 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
1000
30s
Figure 10. Maximum Drain Current vs. Case Temperature
180 150
ID, Drain Current [A]
ID, Drain Current [A]
100
100s 1ms 10ms DC
120 90 60
Limited by package
10
Operation in This Area is Limited by R DS(on)
*Notes:
1
1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o
o
30 0 25
0.1 1 10 VDS, Drain-Source Voltage [V] 100
50 75 100 125 150 o TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
2 1
Thermal Response [ZJC]
0.5
0.1
0.2 0.1 0.05 0.02
PDM t1 t2
0.01
0.01 Single pulse
*Notes: 1. ZJC(t) = 0.56 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
1E-3 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
FDP047N08 Rev. A
4
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FDP047N08 N-Channel PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP047N08 Rev. A
5
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FDP047N08 N-Channel PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
FDP047N08 Rev. A
6
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FDP047N08 N-Channel PowerTrench(R) MOSFET
Mechanical Dimensions
TO-220
FDP047N08 Rev. A
7
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FDP047N08 N-Channel PowerTrench(R) MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM *
TM
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) *
tm
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SupreMOSTM SyncFETTM (R) The Power Franchise(R)
tm
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status
2.
A critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
FDP047N08 Rev. A
8
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